Nano-textured multi-crystalline sili con (mc-Si) solar cells are succes sfully fabricated on an industrial scale and the effect of emitter sheet resisti vity on photoelectric conversion is explored.The experimental results show enha nced short-circuit current and open-circuit voltage with increasing emitter sh ee t resistivity for the nano-textured mc-Si solar cell.It may be attributed to re duced recombination of charge carriers in the nano-emitter.However,the fill f a ctor is reduced with increasing emitter sheet resistivity due to deteriorating c ontact between the metal grid and the nano-emitter.The nano-textured mc-Si s ola r cells with optimizing emitter sheet resistivity exhibit an enhanced optoelectr onic conversion in comparison to micro-textured mc-Si solar cells,and high po we r conversion efficiency of up to 19.20%.Based on the results,we discussed how to further improve the photoelectric conversion performance of the nano-texture d mc-Si solar cell through increasing emitter sheet resistivity.