The luminescence characteristic of the silicon thin film solar cells is studied using the electroluminescence principle,and the corresponding electrical performance is d eeply analyzed in the paper.The inherent correlation properties between the electrical performance and the lumin escence characteristics are deeply studied.Firstly,The spectrum wavelength of the thin film solar cell infrared b and detected by the high sensitivity spectrograph is about 860nm to 1200nm and the thin film sol ar cell′s energy gap which is about 1.12eV is analyzed. Secondly,the EL image were detected by the cryogenic CCD camera,and under the same bias voltage 80V the internal relation between the electrical performance tested by the AAA Calss sol ar spectrum and the luminescence intensity is deeply analyzed.Under different bias voltage 35V＼5V＼80V,the positive correlativity of different bias voltage and the solar cell EL intensity,the positive correlativity of different current and the solar cell EL intensity is respectively researched.The research indicates that the high series resistan ce and the low shunt resistance lead to weaken luminescent spectrum intensity for the electricity of partial pressure an d shunting effect.It will provide rapid and accurate criterion to improve thin film solar cell process by combinin g the electroluminescence measurement and electric performance test.