The copper-zinc-tin-chalcogenide (CZTSSe) thin films were depos ited by thermal evaporation method.First,we fabricated CZTSSe thin films by one-step method in low substr ate temperature of 300℃.Second,we fabricated CZTSSe thin films by two-step method in substrate temperatures of 300℃ and 480℃.Last,CZTSSe thin films were deposite d by one-step method in substrate temperatures of 480℃.CZTSSe thin films on flexib le substrates by different methods were characterized by scanning electron microsco pe (SEM),X-ray diffraction (XRD) and Raman spectrum.The grains of CZTSSe thin films deposited by one-step method in low substrate tempe rature of 300℃ and two-step method are small,and the surfaces are rough.However,the grains of CZTSSe thin films deposited by one-step method in substrate temperature of 480℃ are big,and the surface is smooth.Full widths at half maximum of three diffracti on peraks the peak are narrower,so the quality of grains change better.There is no impurity phase in the Raman spectra.So CZTSSe thin fil ms fabricated by one-step method in substrate temperatures of 480℃ is s uitable for the application of CZTSSe thin film solar cell.