To obtain the efficient rectification device and the mini ultra-short wavel ength luminescent device, a novel device based on the ZnO-CuO structure is fabricated by the atomic layer deposition (ALD) method and immersion method.By the experiments,we tested the I-V characteristics curve and Log I-V characteristics.By de tecting th e electrical and optical characteristics of the device,the results get the rectification ratio of 22.79and the ideality factor of 17.69.Simultaneously,the threshold voltage and rectification ratio decrease with increasing the thickness of CuO.To photoluminescence (PL) characteristics,the device obtains the remarkable energy peak at the wavelength of 385nm,and follows a feeble energy peak at the wavelength of 572nm.Here,the peak of near-band edge emission reduces with increasing the thickness of CuO,and the pea k of deep energy level scattering enlarges.The device has the potential applications in the fields of the superior performance nano diode, field-effect tube and micro-photoluminescent device.