Optical interconnection has been studied to replace electronic interco nnection because of its significant performance advantages,such as high speed and low crosstalk.Si licon based light emitting device (Si-LED) with low operating voltage and high conversion efficie ncy is the key to realizing optical interconnection.Based on the n⁺ source/drain region of standard CMOS technology,this work designs and fabricate s an Si-LED array with wedge-shaped n^+pn+ configuration in the commercial standard 0.18μm 1P6M CMOS process offered by United Microelectronic Corporation (UMC) without any modification.Th e measurement results indicate that the designed Si-LED can operate properly between 0.9V an d 1.5V,which is compatible with the power supply of CMOS integrated circuits.When the device is forward-biased, the light emitting spectrum of the Si-LED has a peak at about 1100nm.An optical power of 1800nW is obtained at a forward current of 390mA,and the power conversion efficiency i s 3.5×10－6.Due to the features of low operating voltage and high optical power,our Si-LED can be mon olithically integrated with the CMOS circuits,and has a potential application in the field of optical interconnections.