In order to meet the need of solid state white light illumination and variable wavelength light source used in optical communication,based on the analysis of the property of the reverse biased tunnel junction,we design monolithic-integr ated dual-wavelength light emitting diodes which are connected by a reverse biased t unnel junction.By metal organic chemical vapor deposition (MOCVD) on a GaAs substrate in a single step,we grew epitaxially this device that can emit two kinds of wavelengths of l ight simultaneously.This kind of monolithic integration device consists of two active regions, an AlGaInP multi-quantum well active region and a GaInP multi-quantum well act ive region,which are connected by a reverse biased tunnel junction.Through the proc ess,we fabricated the LEDs.At 20mA Dc injection current,the devices can emit wa velengths of 626nm and 639nm at the same time,the output lig ht intensity is 127mcd,and the forward voltage is 4.17V.The test results are com pared with those of the traditional one-active-region light emitting diodes.The outp u t light intensity of dual-wavelength LEDs is higher than that of traditional LE Ds.The forward voltage of dual-wavelength LEDs is not high.