For researching the influence of laser wavelength on crystallization e ffect in continuous laser crystallization of amorphous silicon (a-Si) thin film,the amorphous silicon thi n film is crystallized by continuous Ar⁺－Kr⁺ laser,under fixed irradiation time of 5ms and different laser wave lengths.The film properties after crystallization are studied by micro-Raman spectroscopic measurement and field e mission scanning electron microscope.It is shown that the thin film crystallizat ion threshold value gets larger with increase of wavelength,the crystallization threshold is 13.2kW/cm^2when the wavelength is 458nm and the crystallization threshold is 19.2kW/cm^2when wavelength is 647nm;in the range from 0to 27.1kW/cm²,the wavelength has less influence on th e maximum crystalline fraction,but the value of maximum crystalline fraction gets larger with the increase of wavelength on the whole.U nder the wavelength 647 nm and laser power density of 26.5kW/cm²,the maximum crystalline fraction of 75.85% is obtained.