Generating the broadband white light t ypically requires two or three types of emitters,which increases complication in material selection and device design.In this paper.a white organic light-emitt ing device (WOLED) based on phosphorescent emissive layer combined with fluoresc ent emitter has been fabricated by vacuum deposition method,in which Ir(ppy)_3was doped into CBP host as green emitting layer,sub-monolayer DCM2was inserted in the electron transporting layer as red emitting layer,and fluorescent blue m aterial DPVBi was employed in the WOLED,respectively.The structure of the device is ITO/NPB(40nm)/DPVBi(d nm)/CBP:Ir(ppy)₃₈%(5n m)/Alq₃(5nm)/DCM2(0.05nm)/Alq₃(45nm)/LiF(1nm) /Al(200nm).The efficient WOLED is obtained by varying the thickness of the blue emitting layer.The maximum luminance,electroluminescence (EL) efficiency,p ower efficiency of the device with the thickness of 12nm DPVBi are 30440cd/m²,6.75cd/A,2.67lm/W,respectively.Moreo-ver,the Commi ssion Internationale De L′Eclairage (CIE) coordinates of the device vary from ( 0.59, 0.39) at 4V to (0.35,0.38) at 14V generally within the white region.The p erformance of the WOLED may be tuned by changing the thickness of DPVBi.This app roach is expected to reduce manufacture cost and avoid the complexity of co-dep osition process in thermal evaporation.