Based on optical transfer matrix theory,a distributed Bragg reflector(DBR) consisting of SiO2 and Ti3O5 is designed as the current barrier layer for high-brightness LED chips,and a trench structure is etched by inductively coupled plasma(ICP) technique at the current barrier.The problems that the current spreading restricts the improvement of the LED efficiency and the metal electrodes reduce light-extraction efficiency are solved by this way.The experiment results indicate that the brightness of the LED chip with this structure can be increased by 5%,while the chip voltage is essentially unchanged,which shows that the new structure can greatly ameliorate the current spreading and increase the extraction efficiency of LED chip.