Porous silicon(PS) samples were formed by the electrochemical anodization on the p-type(100) silicon wafer,and ZnO films were deposited on the PS substrates at different oxygen partial pressures by the radio frequency(RF) reactive magnetron sputtering technique.X-ray diffraction(XRD) patterns show that all samples(ZnO/PS) have a diffraction peak at about 34.24° corresponding to the ZnO(002) direction,which indicates that ZnO films have a preferential c-axis orientation,but the full width at half...