In this paper,the relationship between the electroluminescence(EL) intensity from Si solar cells under the forward bias and the minority carrier diffusion length is simulated based on the ideal P-N junction model.We conclude that the relationship referred above is nonlinear.The relationship between the defects in Si solar cells and the minority carrier diffusion length(EL intensity) is summed up.The defects and minority carrier lifetime are also in accordance with this relationship.Based upon th...