In this paper,the etching of diamond film is done by inductively coupled oxygen plasma to explore the treatment and modification methods for the diamond film surface.Based on the analysis with different etching rates under different inductively coupled plasma(ICP) RF source power values and bias RF source power values,the etching mechanism is explored.And the relative contents of sp2 and sp3 were characterized by Raman spectra.Etching results show that part of the sp3 bonds change into sp2 bonds...