InGaN:Mg films were grown by metal-organic chemical vapor deposition(MOCVD),and the properties of InGaN:Mg the materials with different source fluxes were studied.The optical and electrical properties show that when epitaxial growth temperature is at 760 ℃,the TMIn molar flux is certain,the In molecomposition increases with the increase of CP2Mg and Ⅲ family source molar ratio(/[Ⅲ]),and the hole concentration also increases linearly.When /[Ⅲ] is 1.12×10-3,the high hole concentration of 4.78×1019...