A series of amorphous silicon thin films and solar cells are fabricated by RF-PECVD at deposition temperature of Ts=125 ℃.The properties of a-Si:H films are optimized through the variation of power and silane concentration under low pressure(85 Pa) and high pressure(400-667 Pa).The results show that under the high pressure conditions,the electrical and structural properties of a-Si:H films are improved at proper silane concentration and pressure/power ratio(Pg/P).At substrate temperature of Ts=1...