A series of n-i-p type amorphous silicon solar cells are prepared by radio-frequency plasma enhanced chemical vapor deposition(RF-PECVD),and ITO films as front contact layer are prepared by reactive thermal deposition technique.A series of p layer with different crystalline volume fraction(Xc) are fabricated by changing B2H6 doping concentration.The influences of p layer on the p/ITO interface as well as n-i-p type solar cell properties are investigated in detail.The results show that the contact property o...