Aluminum nitrogen(AlN) films are successfully deposited on single-crystal Si(111) and Si(100) substrates by the radio frequency(RF) magnetron reactive sputtering technique,respectively.The influence of substrate orientation and N2 percentage on preferentially orientated AlN(002) thin film is studied experimentally and theoretically.The orientation of the films is characterized by X-ray diffraction(XRD).The experimental results show that the films on Si(100) with 40% N2 exhibit best crystal properties with s...