The planar-type InGaAs infrared detectors are fabricated on the NIN-type InP/In0.53Ga0.47As/InP wafers by using the sealed-ampoule method with SiO2 and Si3N4 respectively as the diffusion masks.The forward current-voltage characteristics at room temperature for the detectors with different diffusion area and the relationship of the reverse dark current density versus perimeter-to-area ratio characteristics of the two-type InGaAs detectors are analyzed.It is indicated that the passivation for the edge of the...