A high efficient AlGaInP thin-film light emitting diode(LED) with transparent conducting indium tin oxide(ITO) p-type ohmic contacts and with a high reflectivity metal reflector structure was proposed.ITO layers are also used as window material and spreading layers of current on AlGaInP LED.The AlGaInP LED epitaxial layers with metal reflector is inverted to bond to the GaAs submount by using 80 Au-20 Sn(wt%) alloy as a solder (RS-LED).The optical and electrical characteristics of the new structure LED(RS-LED) are presented and compared with conventional AlGaInP absorbing substrates AS-LED and AS-LED with DBR Great improvements in output power and luminous intensity were observed.It is shown that the output power from the RS-LED at forward current 20 mA is 2.4 and 1.7 times higher than that of AS-LED and DBR-AS-LED respectively.179.6 mcd luminous intensity from the RS-LED (@20 mA,peak wavelength 624 nm) could be obtained under 20 mA injection,which is 2.15 and 1.28 times higher luminous intensity than that of AS-LED (@20 mA,peak wavelength 627 nm) and DBR-AS-LED (@20 mA,peak wavelength 623 nm),respectively.