In this paper the explore of transfomation between lattice mismatch layers such as GaAs/Si.For this propose the compliat substrate Si/SiO 2/Si structure is fabricated and the thin layer of GFaAs is obtained by smart cut method,which are bonded to comopliat substrate with low temperature SiO 2 as transition layer.The transfer of thin layer GaAs onto Si were achived.The results were analysed and discused,in which the feasiblity of transfer process is concluded.And it was emphasized that the perfact of layer of SiO 2 with low temperture deposited is important for resulting completion of GaAs layer trasferred.