It has been obtained that a waveleng th blue-shift of 76 nm using shallow P + ion implanting into a epitaxy-finishe d laser-structure of InGaAs/InGaAsP SL-MQW and annealing at H 2/N 2 mix ing gas,and found that the strain in the active region of InGaAs/InGaAsP SL-MQW can lead QW intermixing more effectively.