The growth and properties of the blue LED InGaN active layer by low pressure MOCVD,as well as advantages of growth at high temperature,were reported.By analyzing photoluminescence spectra of Zn doped InGaN films,it was found that the intensity of the Zn related peak was limited by the solubility of zine in InGaN alloy.The typical PL spectra of InGaN active layer in the blue range were given by using various techniques.