We have investigated the emission and capture process of native defects in undoped In 1- x Ga x P grown by MOCVD using DLTS technique and transient photo resistivity spectroscopy (TPRS) technique.A common defect with activation energy of about 0.35 eV was observed with DLTS technique.The capture barriers of the defect distributed over 60 meV from 180 meV to 240 meV with TPRS measurements.The distribution can be interpreted as the microscopic fluctuation of atomic arrangements around the defect.Two defects with capture barrier energy 0.06 eV and 0.40 eV,which can not be detected with DLTS technique,were also observed with TPRS measurements.