Amorphous and polycrystalline Aluminum Nitride thin film were prepared with different power by radio frequency magnetron reaction sputtering on the quartz.High pure Al,MnF 2 were used as target materials and N 2,Ar were used as sputting gas.It is observed that the absorb peak position of the amorphous thin film is 20 nm shorter than that of the pollycrystalline one.The information of characteristic phonon frequency of amorphous AlN thin film is obtained through the analysis of Raman Spectrum.It is the first report that the AlN:MnF 2 thin film was prepared by sputting with the target of Al and MnF 2 together.In the anealed polycrystalline AlN:MnF 2 thin film,the characteristic photolumineascence of Manganese was found.