Abstract:This paper reports the fabrication of InGaAsP/GaAs Single Quanlum Well(SQW) lasers with the revised LPE technology.When AR and HR films are cvaporated on to the respective cavity surfaces,the output power can almost be doubled.In the experiment,Nd:YAG laser was end pumped by the above mentioned laser diode with the input power of 2.7w(cw),cw output power of 700mW of the Nd:YAG laser has been obtained.
