| GaN with a wide band gap, high quantum efficiency, excellent thermal stability, and radiation resistance is important role in high frequency, high power electronics, and UV photoelectron devices. In this study, we present a novel approach by utilizing high-energy N plasma as the nitrogen source for synthesizing the GaN films with higher quality crystalline. This process occurs at a relatively low temperature of 850 °C, utilizing the economical and eco-friendly PECVD method. Furthermore, the effects of Nitrogen flux on the growth dynamics, optical characteristics, and crystallinity of the films are investigated. The results reveal that an increase in N plasma flux enhances both the film growth rate and crystalline quality by boosting the kinetic energy of reacting atoms. Nevertheless, a further increase in N plasma flux results in excessive nucleation, preventing atoms adsorbed on the substrate from migrating to appropriate positions. Consequently, the films grow in random directions, leading to a decline in crystalline quality. The GaN films prepared in this study achieved a carrier concentration of 2.19×1018 cm-3 and mobility of 5.17 cm2V-1s-1, demonstrating significant potential for optoelectronic device applications. |