吴彦文,相广彪,苗晓娜,李雨爽,冷建材,马红.基于飞秒激光对PbI2薄膜瞬态克尔磁光效应研究[J].光电子激光,2022,33(5):536~542 |
基于飞秒激光对PbI2薄膜瞬态克尔磁光效应研究 |
Transient Kerrmagneto-optical effect in PbI2thin films by femtosecond laser |
投稿时间:2021-10-08 |
DOI: |
中文关键词: PbI2薄膜 瞬态反射光谱 克尔旋转光谱 自旋弛豫寿命 |
英文关键词:PbI2film transient reflectivity spectroscopy Kerr rotation spectro scopy spin relaxation mechanism |
基金项目:山东省自然科学基金(ZR2020MA081,ZR2019MA037,ZR2018BA031)资助项目 (1.山东师范大学 物理与电子科学学院,山东 济南 250358; 2.齐鲁工业大学(山东省科 学院),电子信息工程学院(大学物理教学部),山东 济南 250353) |
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中文摘要: |
本文利用飞秒瞬态反射光谱和克尔旋转光谱,系 统研究了溶液法制备的厚度为~200 nm的PbI2薄膜 的动力学过程,并讨论了自旋弛豫机制。研究结果表明,瞬态反射光谱在502 nm处出现漂白峰,在487 和522 nm处出现吸收峰,分别归因于带填充效应和带隙重整效应。左 旋圆偏振光和右旋圆偏振光激发得 到的克尔磁光信号符号相反、大小相等,最大克尔旋转角和椭偏率分别达到10°/μm。自旋弛豫寿 命随抽运光通量的增加而缩短,最短弛豫寿命为1.6 ps,自旋弛豫机 制归因于强自旋轨道耦合效应导致的 Elliott-Yafet机制。另外,结果发现克尔磁光效应在带隙附近信号较强。在测量的波长 范围内,自旋弛豫 寿命均在几个皮秒量级,表明了PbI2材料是制备自旋电子器件的良好材料,并且在带隙附 近灵敏度最高。 |
英文摘要: |
The carrier and spin dynamics in solution-processed PbI2film on quart z substrate have been systematically studied by transient reflectance (TR) spectroscopy and femto second resolved Kerr rotation spectroscopy. The results show that TR spectroscopy includes one b and of photo-induced bleach (PB) centered at 502nm and two bands of photo-induced ab sorption (PIA) at 487and 522nm,which are interpreted by band filling effect and band gap renorm alization effect.The Kerr magneto-optical signals excited by left-handed and right-handed circular ly polarized light are completely opposite in sign and almost equal in size.With the increase of pump fluence,the Kerr rotation angle and ellipticity increase linearly at first,then slowly,finally reach maximum value,~10degree and 0.12per micro,respectively.At the same time,the spin relaxation l ife decreases a minimum value ~1.6ps.According to our experimental data,the spin relaxation m echanism in PbI2thin films is attributed to the Elliott-Yafet process owing to the strong spin -orbit coupling caused by the heavy atom lead.In addition,we find that Kerr effect has a large signal ar ound the band gap, which suggests that the spintronic devices based on PbI2have high sensitivity around the band gap. These experimental results obtained in this paper are of great significance for exploring the potential applications of PbI2thin films in spintronic devices. |
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