| 高玉竹,赵子瑞,龚秀英,魏小梅,冯彦斌,司俊杰.近室温工作的中长波InAsSb探测器[J].光电子激光,2018,29(12):1266~1269 |
| 近室温工作的中长波InAsSb探测器 |
| InAsSb photodetectors with long wavelength operating at near room temperature |
| 投稿时间：2018-05-22 |
| DOI： |
| 中文关键词: InAsSb 近室温工作 光谱响应 峰值响应率 |
| 英文关键词:InAsSb operating at near room temperature spectral photoresponse peak respons ivity |
| 基金项目:军工科研资助项目 (1.同济大学 电子与信息工程学院,上海 201804； 2.陕西华星红外器件公司, 西安 712099； 3.中国空-空导弹研究院,洛阳 471000) |
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| 中文摘要: |
| 用熔体外延法(melt epitaxy),在砷化铟(In As)衬底上,制备了长波铟 砷锑(InAs0.05Sb0.95)厚膜单晶。熔体外延法,是一种改进的液相外延法(LPE)。 用扫描电子显微镜(SEM)观察了样品的横截面,测量出外延层的厚度达到150 μm,这个厚度有效地抑制了外延层与衬底之间晶格失配的影响。制作了近室温 工作的中长波铟砷锑探测器,是光导型器件,安装了半导体制冷器。250 K下, 光谱响应的波长范围为2－11 μm,峰值响应率为153.7 V/W,加装锗(Ge)场镜 后,峰值响应率提高到1912.6 V/W,指示了在 红外探测领域的应用前途。 |
| 英文摘要: |
| InAs0.05Sb0.95 thick epilayers with long wavelength were gr own on InAs substrates using melt epitaxy (ME).ME is an improved liquid phase epitaxy (LPE) method.The cross section of InAsSb samples was observed by scanning electron microscopy (SEM).The thickness of the epilayers reaches 150μ m. This thickness effectively suppresses the influence of the lattice mism atch between the epilayers and substrates.InAsSb photodetectors with long wavelength operating at near room temperature were fabricated.The detectors are photoconduc tors with TE coolers.At 250K,the photoresponse wavelength range is 2－11μm.The peak responsivity is 153.7V/W,which has been enhanced to 1912.6V/W by installing Ge filed lens,indicating application prospects for infrared detect ion. |
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