| 丁和胜,殷磊,袁兆林,任亚杰,黄文登,邓建平.ZnO纳米晶薄膜/p-Si异质结制备及其光电特性[J].光电子激光,2018,29(5):499~504 |
| ZnO纳米晶薄膜/p-Si异质结制备及其光电特性 |
| Fabrication and optoelectronic characteristics of ZnO nanocrystalline thin film/p-Si heterojunction |
| 投稿时间：2017-09-06 |
| DOI： |
| 中文关键词: ZnO纳米晶 异质结 光透过率 整流率 |
| 英文关键词:ZnO nanocrystals heterojunction optical transmittance rectification ratio |
| 基金项目:陕西省自然科学基金(2017JM6090)和陕西省教育厅自然科学基金(16JK1135)资助项目 (1.陕西理工大学 物理与电信工程学院,陕西 汉中 723001； 2.陕西理工大学 陕西省工 业自动化重点实验室,陕西 汉中 723001) |
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| 中文摘要: |
| 为了发展高性能、低成本和结构简单的ZnO纳米 器件,在本文中,利用简便的热分解法,在p型 硅(p-Si)基底上制备ZnO纳米晶薄膜,利用场发射扫描电子显微镜(FESEM)、X射线衍射仪 (XRD)、紫外- 可见分光光度计和荧光光谱仪,分别研究了ZnO纳米晶薄膜的形貌、晶相结构和光学特性。 结果显示:在 p-Si基底上形成不规则颗粒状ZnO纳米晶,为多晶六方纤锌矿结构。ZnO纳米晶薄膜在可 见光区光透过率 高于90%,光学带宽为3.26eV,仅在 387nm处出现一个很强的近带边(NBE)发射峰。进一步发现ZnO纳米 晶薄膜/p-Si异质结在暗态和365nm紫外光照射下都出现整流特性, 形成了二极管。在暗态下,该二极管的 整流率为3.95(±2.46 V),开启电压约为0.7V,理想因 子为4.65,反偏饱和电流为4.57×10－8 A。在365nm的 紫外光照射下,它的整流率高达24.85(±0.65V),说明它对365nm的紫外光有很高的响应,适合用于紫外光探测 器。 |
| 英文摘要: |
| In order to develop low-cost ZnO nanodevices with high performance an d simple structure,in this paper,ZnO nanocrystalline thin films were prepared on p-type silicon (p-Si) s ubstrates by thermal decomposition method.The morphology,crystalline structure a nd optical properties of ZnO nanocrystalline thin films were investigated by field emission scanning electron microscopy (FESEM),X-ray diffractometer (XRD),ultraviolet-visible (UV-Vis) spectrophotometer and the f luorescence spectroscopy, respectively.The results show that the irregular particle-like ZnO nanocryst als with a polycrystalline hexagonal wurtzite structure are formed on the p-Si substrate.The optical transmittance of ZnO nanocrystalline thin films in the visible region is above 90%,its optical bandgap is 3.26eV,and only a stro ng near band edge (NBE) emission peak is found at 387nm.Moreover,it is found that the ZnO nanocrysta lline thin film/p-Si heterojunction exhibits rectifying behavior in the dark and under 365nm UV ill umination,indicating the formation of a diode.In the dark,the rectification ratio,turn-on voltage,id eal factor and reverse-bias saturation current of this diode are 3.95(±2.46V),0.7V,4.65and 4.57×10－8 A,res pectively.Under 365nm UV illumination, its rectification ratio is increased sharply to 24.85(±0.65V),suggesting that this diode has a high response to 365nm UV illumination,and it is suitable to be applied as UV photodetectors. |
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