| 李亭亭,张方辉,杜帅.绿色磷光OLED热电击穿特性的研究[J].光电子激光,2018,29(1):1~7 |
| 绿色磷光OLED热电击穿特性的研究 |
| Research on thermoelectric breakdown characteristics of green phosphorescent OLE D |
| 投稿时间：2017-04-07 |
| DOI： |
| 中文关键词: 有机电致发光器件(OLED) 绿色磷光 热电击穿 寿命 |
| 英文关键词:organic light emitting-diodes (OLEDs) green phosphorescent thermoelectric break down lifetime |
| 基金项目:国家自然科学基金(61605105)资助项目 (陕西科技大学 电气与信息工程学院,陕西 西安 710021) |
|
| 摘要点击次数: 1965 |
| 全文下载次数: 0 |
| 中文摘要: |
| 制备了结构为ITO/MoO3(40nm)/NPB(40nm)/TCT A(10nm)/CBP:Ir(ppy)2acac(14%nm)/BCP(10nm)/Alq3(30nm)/LiF(1nm)/Al(100nm)的绿色磷光有机电致发光器件(OLED), 通过测量不同电压下器件的亮度、温度、电流和效率等参数,利用瓦格纳热击穿理论和空间 电荷限制电流模型等理论对器件的热电击穿特性进行了 分析和实验研究,进而找到提高OLED寿命的方法。结果表明,在电压较小时,随着时间的增 加,器件的 温度基本稳定在20℃,器件的亮度基本稳定在80cd/m2,器件的电流效率基本稳定在40～60cd/A。在电压较高时,随着时间的增加, 器件的温度在114s内由22.16℃上升到35.91℃,器件的亮度在193s内由17380cd/m2降低到 7585cd/m2,器件的电流效率在106s内由0.122208cd/A降低到0.054515cd/A。原因为,电 压较小时, 载流子获得能量较少,迁移速度较为缓慢,使得器件电流较小,产热少,热量能够及时散发 出去；而当电 压较高时,获得足够能量的电子和空穴运动加剧,器件内部的电流也急剧增大,产热大于散 热,温度升高 较快,器件最终出现了热电击穿,使其性能出现衰减。这表明,OLED的散热对其击穿有着非 常重要的影响,良好的散热条件能够降低器件热电击穿现象发生的概率,进而提高OLED的寿 命。 |
| 英文摘要: |
| The green phosphorescent organic light emitting diode (OLED) device with the structure of ITO/MoO3(40nm)/NPB(40nm)/TCTA(10nm)/CBP:Ir(ppy)2acac(14%)(30nm)/BCP(10n m) /Alq3(30nm)/LiF(1nm)/Al(100nm) were prepared.By measuring the luminance,tem perature,current and efficiency and other parameters under different voltages,the thermoelectric breakdown characte ristics of the device are analyzed and studied by Wagner thermal breakdown theory and space-charge limiti ng current model.So that we can find a way to improve the lifetime of OLED device.The results show t hat when the voltage is small,with the increase of time, the temperature of the device is basically stabilized at 20℃ the luminance of the device is basically stabilized at 80－400cd/m2,and the curre nt efficiency of the device is basically stabilized at 40－60cd/A.When the vol tage is high,with the increase of time,the temperature of the device rises from 22.16℃ to 35.91℃ in 114s,the luminance of the device is reduced from 17380cd/m2to 7585cd/m2in 193s,and the c urrent efficiency of the device is reduced from 0.122208cd/A to 0.0545152cd/A in 106s.That is because when the voltage is small,the carrier has less energy,and the migration speed is slow,which makes the current of the device sm aller and also makes less heat generation so the heat can be sent out in time.However,when the voltag e is high,the movement of electrons and holes is intensified and the current ins ide the device also increases rapidly, the heat generation is greater than the heat dissipation so the temperature rise s rapidly.The device finally appears the thermoelectric breakdown,so that the performance of the dev ices is reduced.It can be seen that the heat dissipation of OLED devices has a very important impact on the breakdown.A good heat dissipation condition can reduce the probability of thermoelectric bre akdown of the device,and then extend the lifetime of OLED devices. |
| 查看全文 下载PDF阅读器 |
| 关闭 |
|
|
|
|
|