| 陈荔群,蔡志猛,严光明.金属Al与半导体Ge欧姆接触的制备和表征[J].光电子激光,2017,28(5):482~486 |
| 金属Al与半导体Ge欧姆接触的制备和表征 |
| Fabrication and characteristics of Al/Ge ohmic contact |
| 投稿时间：2016-08-07 |
| DOI： |
| 中文关键词: 金属与Ge接触 欧姆接触 比接触电阻率 |
| 英文关键词:meltal/Ge contact ohmic contact specific contact resistance |
| 基金项目:福建省中青年教师教育科研(JA15654)资助项目 (1.集美大学 诚毅学院,福建 厦门 361021； 2.厦门华厦学院,福建 厦门 361000； 3. 厦门大学 物理系,半导体光子学研究中心,福建 厦门 361005) |
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| 中文摘要: |
| 基于圆形传输线模型,通过测试样品的比接 触电阻率和电流-电压(I-V)特性曲线,分析 对比了Al与Si基上外延生长的p型Ge、n型Ge和n型Si的接触特性。实验结果发现,由于金 属与Ge材料接触存在强烈的费米钉效应,导致金属与n型Ge接触有高的接触电阻,难实 现低的比接触电阻率；而Al与p型Ge在掺杂浓度为4.2×1018 cm－3时,并且经过退火,比接 触电阻率能达到4.0×10－7 Ω·cm2；Al与n型Ge和n型Si接 触电极相比,后者可形成良好的 欧姆接触,其比接触电阻率较n型Ge接触降低了1个量级,经合金化处理后的Al/n+Si接触 电阻率能达到5.21×10－5 Ω·cm2,达到了制作高性能Ge 光电器件的要求。 |
| 英文摘要: |
| The contacts of metal Al with p-Ge,n-Ge and n-Si are comparatively studied ba sed on circular transmission line model by analyzing the specific contact resist ance and current-voltage curve.The results show that large contact resistance between metal and n-Ge due to Fermi level pining effect at the interface strongly makes it difficult to ge t low specific contact resistance.When the concentration of p-Ge is 4.2×1018 cm－3,the specific contact resistance is 4.0×10－7 Ω·cm2after annealing.Compared with Al/n-Ge,the Al/n- Si can obtain good ohmic contact,and the specific contact resistance of Al/n-Si reduced by one order of magnitude.The specific contact resistivity of the fab ricated Al/n+Si can reach 5.21×10－5 Ω·cm2after annealing.These parameters are helpful to achieve high performance Ge photodetectors. |
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