冯少君,薛玉明,刘浩,宋殿友,夏丹,孙海涛,李鹏宇,乔在祥.衬底温度对CZTSSe薄膜结构特性的影响[J].光电子激光,2017,28(3):285~289 |
衬底温度对CZTSSe薄膜结构特性的影响 |
Influences of substrate temperature on structural properties of CZTSSe thin films |
投稿时间:2015-11-17 |
DOI: |
中文关键词: 铜锌锡硫(CZTSSe) 衬底温度 太阳电池 结构特性 薄膜 |
英文关键词:CZTSSe substrate temperature solar cell structural property thin film |
基金项目:国家高技术研究发展计划项目(2012AA050701)和天津市高等学校大学生创新创业训练计划(201410060018,201410060036)资助项目 (1.天津理工大学 天津市薄膜电子与通信器件重点实验室,天津 300384; 2.天津电源研究 所,天津 300381) |
|
摘要点击次数: 698 |
全文下载次数: 0 |
中文摘要: |
采用热蒸发法制备铟锌锡硫(CZTSSe)薄膜。采用低 温一步 法在300℃衬底温度下制备CZTSSe薄膜;采用两步法,即在衬底温度 分别为300℃制备CZTSSe 薄膜;将衬底温度设定为480℃不变,一步蒸发沉积CZTSSe薄膜。通 过对X射线衍射(XRD)、 扫描电镜(SEM)、拉曼谱对比发现,在300℃低温下一步法和300℃ 、480℃两 步法沉积的薄膜表面粗糙,碎小晶粒较多;在480℃一步高温法制备 的薄膜表面平整, 晶粒大小均匀,3个衍射峰的半高峰宽变窄,薄膜的结晶质量得到 改善,且没有发现其它杂相的拉曼特征峰,沉积出适合作为制备CZTSSe薄膜太阳电池的 吸收层。 |
英文摘要: |
The copper-zinc-tin-chalcogenide (CZTSSe) thin films were depos ited by thermal evaporation method.First,we fabricated CZTSSe thin films by one-step method in low substr ate temperature of 300℃.Second,we fabricated CZTSSe thin films by two-step method in substrate temperatures of 300℃ and 480℃.Last,CZTSSe thin films were deposite d by one-step method in substrate temperatures of 480℃.CZTSSe thin films on flexib le substrates by different methods were characterized by scanning electron microsco pe (SEM),X-ray diffraction (XRD) and Raman spectrum.The grains of CZTSSe thin films deposited by one-step method in low substrate tempe rature of 300℃ and two-step method are small,and the surfaces are rough.However,the grains of CZTSSe thin films deposited by one-step method in substrate temperature of 480℃ are big,and the surface is smooth.Full widths at half maximum of three diffracti on peraks the peak are narrower,so the quality of grains change better.There is no impurity phase in the Raman spectra.So CZTSSe thin fil ms fabricated by one-step method in substrate temperatures of 480℃ is s uitable for the application of CZTSSe thin film solar cell. |
查看全文 下载PDF阅读器 |
关闭 |
|
|
|
|
|