| 杨志平,王天洋,冉争瑞.K2MgSiO4:Eu3+红色荧光粉的制备与发光性能[J].光电子激光,2016,27(7):730~734 |
| K2MgSiO4:Eu3+红色荧光粉的制备与发光性能 |
| Synthesis and luminescence properties of K2MgSiO4:Eu3+ red phosphor |
| 投稿时间：2015-12-24 |
| DOI： |
| 中文关键词: K2MgSiO4:Eu3+ 红色荧光粉 发光 温度猝灭 |
| 英文关键词:K2MgSiO4:Eu3+ red phosphor luminescence temperature quenching |
| 基金项目:国家自然科学基金(50902042)和河北省自然科学基金(F2009000217)资助项目 (1.河北大学 物理科学与技术学院,河北 保定 071002； 2.河北大学 电子信息工程学院 ,河北 保定 071002) |
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| 中文摘要: |
| 采用高温固相反应合成了适合近紫外光-蓝光激 发的K2MgSiO4:Eu3+红色荧光粉,并对其发光特性进行了研究。X射线衍 射(XRD)测试结果表明,合成样品为纯相晶体。样品激发光谱由O2-→Eu3+电 荷迁 移带波长为(200～350nm)和Eu3+的特征激发峰(波长为350～500nm) 组成,主峰位于396nm波长处,次级峰位于466nm波长处。在396nm和466nm波长分别激发 下,样品发射峰均由Eu3+的5D0→7FJ(J=0,1,2,3,4)能级跃迁产生,其中619nm波长处发射强度最大。 随着Eu3+掺杂浓度的增加,荧光粉的发光强度增大。在实验测定的浓度范 围内,未出现浓度猝灭现象。样品的色坐标位于红光区,且非常接近NTSC标准。样品发光强 度随温度增加出现温度猝灭现象,发 射峰位置并未出现明显红移。样品中,Eu3+在5D0能 级上的荧光寿命约为0.535ms。 |
| 英文摘要: |
| The red phosphor K2MgSiO4:Eu3+ which can be effectively excited by ultraviolet and blue light was synthesized by high temperature solid state reaction,and its luminescent characteristics were also investigated.The principal crystalline phase of the samples is K2MgSiO4.The excitation spectra of the sample consis t of O2-→Eu3+ charge transitions (200~350nm) and Eu3+ ion excitation peak (350~500nm).The maximum peak appears at 396nm and the second peak appears at 466nm. The phosphor presents several emission peaks under 396nm,and 466nm excitation, respectively, which correspond to the 5D0→7FJ(J=0,1,2,3,4) transition of Eu3+,and the strongest emi ssion is located at 619nm.The luminescent intensity increases with the increase of Eu3+ content.The concentration quenching does not o ccur.The Commission Internationale de L′Eclairage (CIE) coordinates of K2MgSi O4:Eu3+ are very close to the National Television Standards Committee (N TSC) standard.The temperature quenching occurs with increasin g temperature,but there is no emission peak red-shift.Fluorescence lifetime of this sample is about 0.53508ms. |
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