| 李彤,王铁钢,陈佳楣,倪晓昌,Evarist Mariam,赵新为.衬底温度对NiO:Cu/ZnO异质pn结的光电性能影响[J].光电子激光,2016,27(4):386~391 |
| 衬底温度对NiO:Cu/ZnO异质pn结的光电性能影响 |
| Effect of substrate temperature on the optical and electrical properties of NiO:Cu/ZnO pn heterojunctions |
| 投稿时间：2015-11-30 |
| DOI： |
| 中文关键词: NiO Cu掺杂 异质pn结 磁控溅射 整流特性 |
| 英文关键词:NiO Cu doping pn heterojunctions magnetron sputtering rectifying property |
| 基金项目:国家自然科学基金(51501130)、天津市教委(20120710)、 天津职业技术师范大学人才计划(RC14-53；RC14-54)和天津市高等学校创新团队培养计划(TD12-5043)资助项目 (1.天津职业技术师范大学 电子工程学院,天津 300222； 2.天津职业技术师范大学 机械 工程学院,天津 300222； 3.日本东京理科大学 物理系 162-8601) |
|
| 摘要点击次数: 1017 |
| 全文下载次数: 0 |
| 中文摘要: |
| 利用磁控溅射方法改变衬底温度,制备了一系列Ni O:Cu/ZnO异质pn结。实验结果表明,当衬底温 度从室温升高到300℃时,NiO:Cu/ZnO异质pn结的整流特性明显得到 改善；与此同时,NiO:Cu/ZnO异质 pn结的光学透过率也从40%增大到80%。这可能是由于NiO:Cu薄膜结晶质量改善,薄膜内 缺陷减少所致。 继续增加衬底温度至400℃,异质结的整流特性有所削弱,这可能是 由于生长在异质结下层 的NiO:Cu薄膜影响了其上ZnO薄膜的生长,进而影响到异质结的整流特性。这一结论,得到 X射线衍射(XRD)、原子力显微镜(AFM)和紫外(UV)谱测试结果的支持。 |
| 英文摘要: |
| In the present study we have fabricated NiO:Cu/ZnO pn heterojunctions at various substrate temperatures by magnetron sputtering method.X-ray diffraction (XRD) a nalyses reveal the formation of wurtzite-type ZnO structure,and NiO:Cu films show polycrystalline when the substrate temperatu re is set at room temperature. The (111) peaks of NiO:Cu are improved obviously with increasing substrate tempe rature.However,(002) peaks of ZnO are depressed at higher substrate temperature of 400℃.Furthermore, the right-shift of (111) peaks of NiO:Cu with the substrate temperature indicates that the c axis distances shrink .It can be explained by that the strain caused by lattice mismatch between NiO:Cu films and substrates will be relaxed a nd the native defects will be decreased in the heterojunctions through increasing substrate temperature.The i mprovement of crystalline in heterojunctions contributes to the increased optical transmittances and the decreased optical gaps of NiO:Cu films when the substrate temperature increases.Typical rectifying proper ties are shown in the heterojunctions and the best rectifying property appears at 300℃,which can be attributed to the decreased defects, which is also evidenced by the results of XRD,atom force microscope (AFM) and UV spectra.Good rectification behavior and high optical transmittance in NiO:Cu/ZnO pn heterojunctions indicate that they have the application prospect of future transparent optoelectronic devices. |
| 查看全文 下载PDF阅读器 |
| 关闭 |
|
|
|
|
|