| 徐胜,徐玉珍,陈恩果,郭太良.大功率LED伏安特性模型研究[J].光电子激光,2015,26(11):2076~2082 |
| 大功率LED伏安特性模型研究 |
| Study on the new models of high power LED current-voltage characteristics |
| 投稿时间：2015-08-27 |
| DOI： |
| 中文关键词: 大功率LED PN结 伏安特性 |
| 英文关键词:high power light emitting diode (LED) PN junction current-voltage characteris tics |
| 基金项目:国家“863”计划重大专项(2013AA030601-2)、国家自然科学基金(61405037)、福建省自然科学基金(2015J01193)和福州大学博士启动基金(0100510069)资助项目 (福州大学 物理与信息工程学院,福建 福州 350002) |
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| 中文摘要: |
| 研究了大功率LED芯片的伏安特性。基于LED 芯片的特殊性,从经典的PN结伏安特性出发,进行理论推导并通过选择不同的基函 数,构建出了大功率LED芯片的伏安特性新 模型和优化模型,模型中的系数采用最小二乘法进行确定。对大功率LED芯片的实测 伏安特性数据表明,本文构建出的优化模型比经典的PN结模型更能准确表征LED的伏安特性 ,与实测的伏安特性数据一致性更高,更具实用价值。 |
| 英文摘要: |
| In this paper,we study the current-voltage characteristics model o f the high power light emitting diode (LED) chip.Based on the particularity of the high power LED chip and the classical current-volta ge characteristic model of PN junction,we put forward a new model of current-voltage characteristics for hi gh power LED chip and its optimization model through theoretical derivation,analysis and selection of dif ferent basis functions.The coefficients of the two new models of current-voltage characteristics for high power LED are then estimated based on the least square method.Subsequently,we conduct comparative study on the actually measured current-voltage characteristic data of high power LED chip from three well-kno wn enterprises.The results show that the two new models out performthe classical current-voltage characteristic model of PN junction in accuracy with a large m argin.In particular,the experimental results from the optimization model are hi ghly consistent with the measured data from the three well-known enterprises. |
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