| 张敏,张立春,董方营,李清山,张忠俊,赵风周.n-ZnO/p-GaAs异质结光电探测器光电特性研究[J].光电子激光,2015,26(7):1278~1283 |
| n-ZnO/p-GaAs异质结光电探测器光电特性研究 |
| Fabrication and the photoelectric properties of n-ZnO/p-GaAs thin-film heterojunction photodetectors |
| 投稿时间：2015-02-28 |
| DOI： |
| 中文关键词: 探测器 异质结 ZnO GaAs 响应度 |
| 英文关键词:photodetector heterojunction ZnO GaAs responsivity |
| 基金项目:山东省自然科学基金(ZR2014AM027)、山东省高等学校科技计划(J14LJ04)和鲁东大学科 研基金(LY2014006)资助项目 (1.鲁东大学 物理与光电工程学院,山东 烟台 264025; 2.光驰科技(上海)有限公司 薄膜开发部,上海 200444) |
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| 中文摘要: |
| 利用脉冲激光沉积(PLD)技术在p-GaAs外延片 上生长了n型ZnO薄膜,制备了n-ZnO薄膜/p-GaAs 异质结光电探测器原型器件。X射线衍射(XRD)及扫描电子显微镜(SEM)测试结果表明, 生长在GaAs表面上的ZnO薄膜具有较高的结晶质量。在反向偏压下,器件表现出良好的近红 外探测性能,工作电压在－0.5V到－4.0V时,光谱响应 度峰值在850nm附近；当反向电压为－2.0V 时,光响应度达到饱和 ,响应度峰值达到10.17A/W。而比探测 率峰值则在－2.0V达到最大值2.06×1010 cm Hz1/2/W, 之后下降。反向工作电压下的光谱响应度和比探测率曲线表明, 器件对850nm附近的近红外光具有较强的选择性(FWHM 约为30nm)。 |
| 英文摘要: |
| High-quality n-ZnO thin films were deposited on the surface of p-GaA s epitaxial wafer by pulse laser deposition technology to construct the n-ZnO/p-GaAs heterojunction photodetect ors.X-ray diffraction (XRD) and scanning electron microscope (SEM) results show that the ZnO thin films with high crystalline quality on GaAs are obtain ed.Under reverse bias,the detectors exhibit good near-infrared detection performance.With the bias cha nging from －0.5V to －4V,the spectral response curves indicate that all the responsivity peaks appear near 850nm.And when the reverse bias is －2V,the responsivity near 850nm reaches the saturation value of 10.17A/W.However,the specific detectivity reaches peak value of 2.06×1010 cm Hz1/2/W,and then dec reases with the reverse bias increasing.The spectral response curves and the specific detectivity curves under reverse bias exhibit strong selectivity for the near-infrared light in the vicinity of 850nm (with FWHM of 30nm). |
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