| 武雷,谢生,毛陆虹,郭维廉,张世林,崔猛,谢荣.基于标准CMOS的低压高效正向注入型Si-LED阵列研究[J].光电子激光,2015,26(6):1048~1052 |
| 基于标准CMOS的低压高效正向注入型Si-LED阵列研究 |
| Research on forward-biased Si-LED arrays with low operating voltage and high conversion efficiency based on standard CMOS process |
| 投稿时间：2015-02-04 |
| DOI： |
| 中文关键词: 硅基发光二极管(Si-LED) 标准CMOS工艺 正向偏置 低工作电压 光互连 |
| 英文关键词:Si-based LED (Si-LED) standard CMOS technology forward-bi ased low operating voltage optical interconnection |
| 基金项目:国家自然科学基金(61036002,1)资助项目 (天津大学 电子信息工程学院,天津 300072) |
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| 中文摘要: |
| 基于标准CMOS工艺的n+源/漏区和p-sub,设计 了一种楔形n+pn+ 结构的硅基发光二极管(Si-LED)阵列,并经UMC 0.18μm 1P6M CMO S工艺制备。 测试结果表明, 设计的Si-LED 在 0.9~1.5V范围内正常工作,与CMOS电路的电源电压兼容,其发光 峰值波长在1100nm附近；注 入电流为390mA时,器件的发光功率可达1800nW,平均功率转换效率为3.5×10－6 。由于工作电压低、发光功率高,设计的LED器件有望在光互连领域得到广泛应用。 |
| 英文摘要: |
| Optical interconnection has been studied to replace electronic interco nnection because of its significant performance advantages,such as high speed and low crosstalk.Si licon based light emitting device (Si-LED) with low operating voltage and high conversion efficie ncy is the key to realizing optical interconnection.Based on the n+ source/drain region of standard CMOS technology,this work designs and fabricate s an Si-LED array with wedge-shaped n+pn+ configuration in the commercial standard 0.18μm 1P6M CMOS process offered by United Microelectronic Corporation (UMC) without any modification.Th e measurement results indicate that the designed Si-LED can operate properly between 0.9V an d 1.5V,which is compatible with the power supply of CMOS integrated circuits.When the device is forward-biased, the light emitting spectrum of the Si-LED has a peak at about 1100nm.An optical power of 1800nW is obtained at a forward current of 390mA,and the power conversion efficiency i s 3.5×10－6.Due to the features of low operating voltage and high optical power,our Si-LED can be mon olithically integrated with the CMOS circuits,and has a potential application in the field of optical interconnections. |
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