| 杨秀芳,赵昆,李倩倩,杜江涛,王存达,冯列峰.GaN基450nm波长LD在阈值处的反常电学特性[J].光电子激光,2015,26(6):1036~1040 |
| GaN基450nm波长LD在阈值处的反常电学特性 |
| Abnormal electrical propoerties of GaN LDs with 450 nm wavelength in lasing threshold region |
| 投稿时间：2015-02-17 |
| DOI： |
| 中文关键词: GaN 激光阈值 LD 不连续电学特性 |
| 英文关键词:GaN lasing threshold laser diode (LD) discontinuous electrical property |
| 基金项目:国家自然科学基金(11204209,5)、天津市自然科 学基金重点(13JCZDJC32800)、海南省自然科学基金(613173)和天津大学自主创新(2014XRG-0102)资助项目 (天津大学 理学院,天津市低维功能材料物理与制备技术重点实验室 ,天津 300072) |
| 作者 | 单位 | | 杨秀芳 | 天津大学 理学院,天津市低维功能材料物理与制备技术重点实验室 ,天津 300072 | | 赵昆 | 天津大学 理学院,天津市低维功能材料物理与制备技术重点实验室 ,天津 300072 | | 李倩倩 | 天津大学 理学院,天津市低维功能材料物理与制备技术重点实验室 ,天津 300072 | | 杜江涛 | 天津大学 理学院,天津市低维功能材料物理与制备技术重点实验室 ,天津 300072 | | 王存达 | 天津大学 理学院,天津市低维功能材料物理与制备技术重点实验室 ,天津 300072 | | 冯列峰 | 天津大学 理学院,天津市低维功能材料物理与制备技术重点实验室 ,天津 300072 |
|
| 摘要点击次数: 1001 |
| 全文下载次数: 2 |
| 中文摘要: |
| 精确表征了GaN基450nm 波长LD的电学 特性,表观测量的电学参量在阈值附近都出现了明显的突变。器件的(IdV/dI-I)曲线在阈值处突 然上跳。与此对应,其他电学参量在阈值处的突变也与以往观察到的窄带隙780nm 波长LD在阈值处的突变完全反向。表观特性的反常必定造成反常的结特性,利 用 ac－IV方法精确表征了器件的结特性,在阈值区各结电学参 量的突变趋势与以往报道的 窄带隙780nm波长LD也完全相反。光学实验表明,在阈值区内(约3mA)光功率增加 近1个量级。光特性的突然增加必定与电学特性的突变存在必然联系。所有这些反常的电学 特性是传统的激光器理论难以解释的,将促使LD理论的进一步发展。 |
| 英文摘要: |
| The electrical properties of GaN-based laser diode (LD) with 450nm wavelength were measured using the electrical derivative technology and a precis io n impedance analyzer.The sudden changes of the apparent characteristics including (IdV/dI)-I,Cp-I and Gp-I curves in the lasing threshold region were observed.However,in this region, its (IdV/dI)-I curve displays a sudden jump rather than a drop reported in previous referenc es.Correspondingly,the change trends of Cp-I and Gp-I curves in the threshold re gion are also obvious ly opposite to those in the narrow band-gap LDs.The same abnormal results between the wide-band Ga N based LD and the narrow band-gap LDs can be observed in the junction parameters extr acted accurately by our ac－IV method,namely,all junction parameter curves d isplay sudden changes in the threshold region but their change trends are also opposite to thos e in the narrow band-gap LDs reported in our previous papers.In the threshold region,the opti cal power increases by an order of magnitude,which could have an intimated relationship w ith the sudden increase of the junction voltage.All these abnormal electrical properties in w ide band-gap LDs conflict with the current lasing theory,so it will promote further impr ovement of the laser theory. |
| 查看全文 下载PDF阅读器 |
| 关闭 |
|
|
|
|
|