| 纪伟伟,冯金晖,赵彦民,乔在祥.GaInP2/Ge异质结外延材料特性分析[J].光电子激光,2015,26(5):889~893 |
| GaInP2/Ge异质结外延材料特性分析 |
| Characteristics of GaInP2/Ge heterojunction epitaxial materials |
| 投稿时间：2014-12-24 |
| DOI： |
| 中文关键词: 异质结 GaInP2 热光伏(TPV) GaAs 外延 |
| 英文关键词:heterojunction GaInP2 thermo-photovoltaic (TPV) GaAs epitaxy |
| 基金项目:国家高技术研究发展计划(863)(11G20047)资助项目 (天津电源研究所,天津 300384) |
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| 中文摘要: |
| 研制了一种基于Ge衬底的异质结热光伏(TPV)电池 ,并且在Ge衬底上用金属有机化学气相沉积(MOCVD)法外延单晶材料GaInP2和GaAs,对GaInP2/Ge异质结界面进行了断面扫描电镜(SEM)、X射线衍射(XRD)、电化学电 容电压(ECV)和光致荧光(PL)谱的测试分析,研究了基于 Ge衬底的异质结n-GaInP2/p-Ge界面的结构、光学和电学特性,得到了高质量、宽禁带 的单晶外延层,与Ge衬底晶格匹配良好,利于更多光子进入到吸收层,为制备高效率TPV电 池打下良好基础。 |
| 英文摘要: |
| Currently,homojunction structure is the conventional structure of the rmo-photovoltaic (TPV) cells,but the heterojunction structure has rarely been investigated.This paper proposes the heterojunntion structure of TPV based on Ge substrates.The GaInP2and GaAs materials are epitaxied by ment al organic chemical vapor deposition (MOCVD) process.The structural,optical,and electrical properties of GaInP2/Ge heterojunction material are studied by the methods of (SEM)、X-ray diffraction (XRD),EVC,photo lyminescence (PL).We obtain single c rystalline materials GaInP2with wide band gap,high photo-absorption coeffici ent and perfect lattice matching with Ge substrate.It will contribute to high ef ficiency thermo-photovoltaic cells. |
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