| 高玉竹,龚秀英,李继军,吴广会,冯彦斌,Takamitsu Makino,Hirofumi Kan.非制冷型InAsSb光探测器在8～9μm波长的性能提高[J].光电子激光,2015,26(5):825~828 |
| 非制冷型InAsSb光探测器在8～9μm波长的性能提高 |
| Performance enhancement of uncooled InAsSb photodetectors at wavelength of 8～ 9μm |
| 投稿时间：2015-01-14 |
| DOI： |
| 中文关键词: InAsSb 非制冷型光子探测器 光谱响应 探测率 |
| 英文关键词:InAsSb uncooled photodetector spectral response detectivity |
| 基金项目:军工项目和中央高校基本科研业务费资助项目 (1.同济大学 电子与信息工程学院,上海 201804； 2.陕西华星电子工业公司,陕西 西安 712099； 3.Hamamatsu Photonics K.K.,5000Hirakuchi,Hamakita 434-8601,Japan) |
| 作者 | 单位 | | 高玉竹 | 同济大学 电子与信息工程学院,上海 201804 | | 龚秀英 | 同济大学 电子与信息工程学院,上海 201804 | | 李继军 | 陕西华星电子工业公司,陕西 西安 712099 | | 吴广会 | 陕西华星电子工业公司,陕西 西安 712099 | | 冯彦斌 | 陕西华星电子工业公司,陕西 西安 712099 | | Takamitsu Makino | Hamamatsu Photonics K.K.,5000Hirakuchi,Hamakita 434-8601,Japan | | Hirofumi Kan | Hamamatsu Photonics K.K.,5000Hirakuchi,Hamakita 434-8601,Japan |
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| 中文摘要: |
| 研究提高非制冷型铟砷锑(InAsSb)光子探测器在8～9μm波长的灵敏度。用 熔体外延(ME)技术在砷化铟(InAs)衬底上生长了长波长InAsSb厚外延膜,外延层 厚达到50 μm。X-射线衍射(XRD)谱测量表明,外延层为高质量单晶。电子探针 微分析(EPMA)组份分布图像显示,Sb在外延层中的分布比较均匀。用该材料制作了 光导探测器,在探测器上安装了锗(Ge)浸没透镜。非制冷条件下,器件的光谱响应证 明,InAs0.06Sb0.94探测器在波长8.0μm及9. 0μm处的 探测率D*分别为1.30×109cm·Hz 1/2·W－1 及0.28×109cm·Hz1/2·W－1,比InAs0.02 Sb0.98探测器提高了1个数量级,这是由于 InAs0.06Sb0.94材料中As组份的增加引起的。而在波长6.5 μm 处,InAs0.06Sb0.94和 InAs0.02Sb0.98的峰值探测率Dλp均达大于1.00×10 9cm·Hz1/2·W－1,可应用在红外探测和成像领域。 |
| 英文摘要: |
| The improvement of sensitivity for uncooled InAsSb photodetectors with the wavelength longer than 8μm is studied.InAsSb thick epilayers with long wave length were grown on InAs substrates by melt epitaxy (ME) technique.The thickness of t he epilayers reaches 50μm X-ray diffraction (XRD) spectra show that the epilayers are single crystals with high quality.Electron probe microanalysis (E PMA) composition distribution images exhibit that the distribution of Sb in the epi layers is fairly homogeneous.The photoconductors were fabricated using the materials,and Ge imm ersion lenses were set on the detectors.Under uncooled condition,the spectral photore sponses of the devices demonstrate that the detectivity of InAs 0.06Sb0.94 detectors is 1.3×109cm·Hz1/2·W－1 and 2.8×108cm·Hz1/2·W－1 at the wavelengths of 8μm and 9μm , respectively,which is improved by one order of magnitude compared with that of InAs0.02Sb0.98 detectors.This is due to the increasing of arsenic composition in InAs0.06Sb0.94 materials.The pe ak detectivities at the wavelength of 6.5μm of InAs0.06Sb0.94 and I nAs0.02Sb0.98 are higher than 1.0×109cm·Hz1/2·W－1,indicating the possibl e applications for infrared (IR) detection and imaging. |
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