| 杨魏强,张彤蕾,陆勍,陈炳月,吕昭月.利用Cs2CO3和Cs2CO3:BPhen改善OLED的光电性能[J].光电子激光,2015,26(4):671~675 |
| 利用Cs2CO3和Cs2CO3:BPhen改善OLED的光电性能 |
| Improved properties of OLED by utilizing Cs2CO3and Cs2CO3:BPhen |
| 投稿时间：2014-11-21 |
| DOI： |
| 中文关键词: 有机电致发光器件(OLED) 电子注入层(EIL) 碳酸铯(Cs2CO3) 掺杂 |
| 英文关键词:organic light-emitting diode (OLED) electron injection layer (EIL) cesium car bonate (Cs2CO3) doping |
| 基金项目:中央高校基本科研业务费专项资金(222201314022)和上海市大学生创新训练项目(S13047)资助项目 (华东理工大学 理学院物理系,上海 200237) |
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| 中文摘要: |
| 碳酸铯(Cs2CO3)是优秀的电子注入材料,本文 通过器件ITO/MoO3(3nm)/NPB(40nm)/C545T:Alq3(99∶ 1,0nm)/Alq3(30nm)/Cs2CO3(x nm)/Al(100nm)优化了Cs2CO3作为电子注入层(EIL)的厚度。Cs2CO3作为EIL, 提高了器件的电子注入能力,使更多的电子得以与空穴在发光层复合发光。实验结果表明, Cs2CO3作为EIL的优化厚度为1.5 nm时,对应器件的效率是不含Cs2CO3的3倍以上。 在Cs2CO3作为EIL的基础上, 研究器件结构为ITO/NPB(40nm)/Alq3(45nm)/Cs2CO3:Bphen(0%,5%,10%,15nm)/Cs2CO3(1.5nm)/Al(100n m)时 不同浓度的Cs2CO3掺杂电子传输层Bphen(Cs2CO3:Bphen)对器件性能的影响。 结果表明,Cs2CO3掺杂浓度较低时(5%)能进一步改善器 件的电子传输和注入能力,进而提高器件 的发光效率；而掺杂浓度较高时(10%),由于Cs扩散严重,形成淬灭中心,使得发光效率衰减严重。 |
| 英文摘要: |
| Cesium carbonate (Cs2CO3) is known as an excellent electronic injectio n material.To optimize its thickness,the devices of ITO/MoO3(3nm)/NPB(40nm)/C545T:Alq3/( 99∶1,0nm)/Alq3(30nm)/Cs2CO3(x nm)/Al(100nm) were prepared in this work.The enhancement of electron injection was observed owing to the introduction of Cs2CO3EIL.Thus,more electrons recombine with holes in the emissive layer.The experimental results show that t he optimal thickness of Cs2CO3as electron injection layer (EIL) is 1.5nm.The effici ency of the 1.5-nm-Cs2CO3-based-device is more than three times of that of the dev ice without Cs2CO3.On the basis of it,the effect of Cs2CO3doped Bphen (Cs2CO3:Bphen) on the device performance is also investigated by varying Cs2CO3concentration.The device structures are ITO /NPB(40nm)/Alq3(45nm)/ Cs2CO3:Bphen(0%,5%,10%,15nm)/ Cs2CO3(1.5nm)/Al(100nm).Consi dering the current density-voltage (J-V) characteristics of the electron -only devices of ITO/BCP(15nm)/Alq3(45nm)/ Cs2CO3:Bphen(0%,5%,10%,15nm)/Cs2CO3(1.5nm)/Al,the following result s can be concluded:When the doping concentration is lower (5%),the electronic injection and transport c apacity of the device will be further enhanced,resulting in the higher luminous efficiency.Wh en the doping concentration is high (10%),the high efficiency roll-off is observed owning t o Cs atom quenching center induced by interdiffusion. |
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