| 李彤,王铁钢,王达夫,倪晓昌,赵新为.O2含量对Si/NiO:Na异质pn结的光电性能影响[J].光电子激光,2015,26(2):284~287 |
| O2含量对Si/NiO:Na异质pn结的光电性能影响 |
| Effect of O2content on optical and electrical properties of Si/NiO:Na pn heterojunction |
| 投稿时间：2014-11-14 |
| DOI： |
| 中文关键词: NiO Na 掺杂 pn结 磁控溅射 整流特性 |
| 英文关键词:NiO Na doping pn junction magnetron sputtering rectifying property |
| 基金项目:天津市教委(20120710,20110711)资助项目 (1.天津职业技术师范大学 电子工程学院,天津 300222； 2.东京理科大学 物理系,162-8601) |
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| 中文摘要: |
| 利用磁控溅射方法在n型Si衬底上制备了NiO:Na薄膜构成异质pn结,并研究了其光电特性。 实验结果表明,当O2/Ar+O2比例从0%升高到30%时,Si/NiO:Na的pn结表现出最佳整流特性,正向开启电压达到 4.9V时才出现漏 电流。这可能是由于NiO:Na薄膜结晶度得到改善,薄膜内缺陷减少所致。继续增加O2/Ar+ O2比例,薄膜 结晶质量转差,相应也削弱了其整流特性,这一结果得到X射线衍射(XRD)、原子力显微镜(A FM)和紫外(UV)透射结果的充分支持。 |
| 英文摘要: |
| In the present study,we have fabricate d a heterojunction Si/NiO:Na diode by magnetron sputtering method.The X-ray dif fraction (XRD) results show that only one diffraction peak appears for NiO:Na films on Si substrates,which is corresponding to (111) N iO:Na preferred orientation and indicates that NiO:Na belongs to cubic structure.When O2/Ar+O2ratio changes from 0% to 30%,there is no obvious change about (111) diffraction peak position,but the (111) peak in tensity has been improved greatly, which means that the introduction of oxygen is benefit for the NiO:Na film cryst allization.When further increasing O2/Ar+O2ratio to 60%,the (111) peak shifts to left,indicating that c axis d istance increases.This phenomenon can be explained that Ni depletion or oxygen vacancies may be complemented through i ntroducing oxygen atmosphere. The (111) peak reversely shifts to larger diffraction angle when sputtering NiO: Na film in pure oxygen atmosphere, which may result from the excessive oxygen defects.From I-V curves,the electr ical properties show that when changing O2/Ar+O2ratio from 0% to 30%,Si/NiO:Na heterojunction shows the be st rectifying property,where its Voc is 4.9V and the leakage current appears until the negative voltage reaches －7V.It may be explained by that the crystallization of NiO:Na thin films has been improved and their defects decrea se.When further increasing O2/Ar+O2ratio,both the crystallization qualities and rectifying properties of NiO:Na thin films are weakened. Considering the results of XRD,atomic force microscope (AFM),UV and I-V characteristics,it can be concluded that the partial introduction of oxygen atmosphere is beneficial to the crystal structure and reduces the crystal defect ,causing the improvement of the electrical properties of Si/NiO:Na pn junctions. |
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