| 吴明晓,田金鹏,涂程威,谢伟广,刘彭义.WO3对Rubrene/C70有机太阳能电池性能的改善[J].光电子激光,2015,26(1):63~67 |
| WO3对Rubrene/C70有机太阳能电池性能的改善 |
| Performance improvement of Rubrene/C70 based organic solar cells with WO3as buffer layer |
| 投稿时间：2014-10-07 |
| DOI： |
| 中文关键词: 有机太阳能电池(OSCs) WO3 修饰层 Rubrene C70 |
| 英文关键词:organic solar cells (OSCs) tungsten oxide (WO3) buffer layer Rubrene C 70 |
| 基金项目:广东省自然科学基金(S2013010012856)和华南理工大学发光材料与器件国家重点实验室开 放资助项目 (暨南大学 物理系,暨南大学 思源实验室,广东 广州 510632) |
| 作者 | 单位 | | 吴明晓 | 暨南大学 物理系,暨南大学 思源实验室,广东 广州 510632 | | 田金鹏 | 暨南大学 物理系,暨南大学 思源实验室,广东 广州 510632 | | 涂程威 | 暨南大学 物理系,暨南大学 思源实验室,广东 广州 510632 | | 谢伟广 | 暨南大学 物理系,暨南大学 思源实验室,广东 广州 510632 | | 刘彭义 | 暨南大学 物理系,暨南大学 思源实验室,广东 广州 510632 |
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| 中文摘要: |
| 研究了WO3对Rubrene/C70有机太阳能电池 (OSCs)性能的 改善,制备了结构为ITO/WO3/Rubrene/C70/BCP/Al的OSCs,其中WO3插入在I TO和Rubrene中间作为阳极修饰层。通过优化WO3的厚度,研究了WO3对OSCs性能的改善及其作用机理。实验发现,器件的短路电流Jsc、开路电压Voc、 填充因子(FF)、光电转换效率(PCE)和串联电阻Rs等性能参数随WO3厚度的变化呈规律性变化；当 WO3厚度小于80 nm时,器件PCE随着厚度的增加不断增大；当W O 3厚大于80 nm时,器件PCE随着厚度的 增加不断减小；当WO3厚度为80 nm 时,器件PCE达到最高为1.03%, 相应的J sc、Voc、FF分别为2.81mA·cm－2、 0.83V、43.85%,Rs为45.3Ω·cm2,对比没有WO3修饰层, 器件的Jsc、Voc、FF和PCE分别提高了31%、137%、17%,Rs降低了33%。 |
| 英文摘要: |
| The performance improvement of Rubrene/C70 based organic solar cells ( OSCs) with WO3as buffer layer is studied in this paper.The OSCs with the structure of ITO/WO 3/Rubrene/C70/BCP/Al were fabricated．WO3was used as anode buffer la yer,inserted between ITO and Rubrene.The performance and mechanism of the OSCs are studied by inserting WO3with different thicknesses as buffer layer．The experimental results show that the characterist ic parameters of the OSCs, including the short-circuit current(Jsc),open -circuit voltage(Voc),filling factor (FF), series resistance (Rs) and power convers ion efficiency (PCE),have a regular change with different WO3thicknesses as buffer layers.The PCE of the OSCs i s increased with the increasing thickness of WO3,when the thickness is smaller than 80nm.The PCE of the OSCs is decreased with the increasing thickness of WO3,when the thickness is larger than 80nm.T he PCE of the device is as high as 1.03% with 80nm-thick WO3while the J sc ,Voc,FF and Rs of the O SCs are 2.81mA·cm－2,0.83V,43.85% and 45.3Ω·cm2,respectively.Compared with the device without buffer layer,t he Jsc,Voc,FF and PCE of the OSCs are enhanced by 31%,137%,17% and 268%,respectively．Rs is reduced by 33%. |
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