| 曹琛,张冰,王俊峰,吴龙胜.P型掺杂区工艺对Si基Pinned型光电二极管量子效率的影响[J].光电子激光,2015,26(1):54~62 |
| P型掺杂区工艺对Si基Pinned型光电二极管量子效率的影响 |
| Influence of P-type doping process conditions on the quantum efficiency in silicon-based pinned photodiode |
| 投稿时间：2014-10-11 |
| DOI： |
| 中文关键词: Pinned型光电二极管(PPD) 量子效率 工艺条件 数值模拟 |
| 英文关键词:pinned photodiode (PPD) quantum efficiency process condition numerical simul ation |
| 基金项目:国防预先研究项目基金(51311050301095)资助项目 (西安微电子技术研究所,陕西 西安 710071) |
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| 中文摘要: |
| 为了更全面、系统地分析Si基Pinned型光电二极管(PPD,pinned photodiode)量子效率的工艺敏感特性,基于考虑表面(SRH,shockley-read -hall)复合率模型的时域有限差分数值模拟方法,对不同P+型表面层和P型外延(EPI,e pi taxial)层工艺条件下PPD可见光谱量子效率的变化特征及物理机制进行了研究。结果表明 ,P+型表面层离子束注入剂量和注入能量的增加分别引起非平衡载流子SRH复合率升高和 PPD势垒区顶部下移,均可导致低于500nm波段量子效率的衰减,而 后者进一步引起的势垒区纵向宽度缩 减使该影响可持续至650nm波段；P型EPI掺杂浓度增加引起PPD势垒 区底部上移,导致500～750nm 波段量子效率的衰减；P型EPI厚度增加引起衬底强SRH复合区光电荷比重降低,导致高于700 nm波段量 子效率得到提升并趋向饱和。通过分析发现,Si基材料中光子吸收深度对波长的强依赖关系 是导致两种P型 掺杂区工艺条件对量子效率存在波段差异性影响的根本原因。 |
| 英文摘要: |
| In order to analyze the process sensit ivity of the quantum efficiency in silicon-based pinned photodiode (PPD) more c omprehensively and systematically,based on the finite difference time domain num erical simulation by taking account of surface Shockley-Read-Hall (SRH) recombination rate model ,the variation characteristics of the visible spectral quantum efficiency and the corresponding physical mechanism s are both studied under different process conditions of P+-type surface layer and P-type epitaxial ( EPI) layer.Results show that the quantum efficiency of the wavelength under 500nm decreases with both the SRH re combination rate increases and the top position of PPD barrier region moves down,which can be induced by the in creases ion implant dose and energy of P+-type surface layer respectively,and the reduction of the barrier region width further induced by the latter one can make the quantum efficiency attenuation extend to the wavelength of 650nm.The quantum efficiency of the wavelength between 500nm and 750nm decreases with the bottom position of P PD barrier region moves up, which can be induced by the increase doping concentration in P-type EPI layer.The quantum efficiency of the wavelength above 700nm promotes and tends to be saturation due to the reduction of photo charges in the strong SRH recombination region in substrate,which can be induced by the increase EPI thickness.The significant wavelength differences presented in the influence of P-type process conditions on the quantum efficiency can be fundamentally attributed to the intense dependence of photon absorption depth on the incident wavelength in silicon-based material. |
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