邓叶,王晓东,朱彦旭,曹伟伟,刘飞飞,杜志娟,于宁.Ag/Au与n-ZnO的欧姆接触特性的研究[J].光电子激光,2014,(8):1511~1515 |
Ag/Au与n-ZnO的欧姆接触特性的研究 |
Research on Ag/Au ohmic contact to n-ZnO |
投稿时间:2014-04-23 |
DOI: |
中文关键词: Ag/Au n-ZnO 欧姆接触 |
英文关键词:Ag/Au n-ZnO ohmic contact |
基金项目:国家自然科学基金(61107026,61204011)、北京市自然科学基金(4112006)和北京市教委科研计划(KM201210005004)资助项目 (1.北京工业大学 电控学院光电子技术实验室,北京 100124; 2.中国人民武警部队学院 基础部,河北 廊坊 065000) |
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中文摘要: |
为了更好实现ZnO材料在光电器件方面的应用,研 究了Ag/Au和n-ZnO薄膜的欧姆接触。通过半 导体特性分析系统测出欧姆接触的I-V特性曲线和采用挖补圆盘法测试了欧 姆接触的接触电阻率,研究了退 火温度对接触特性的影响。利用俄歇电子能谱(AES)研究了欧姆接触的微 观结构,比较了不同的金属电极的反射特性。结果表明,Ag(50nm)/Au(100nm)和n-ZnO薄 膜的欧姆接触在退火温度 为500℃时最好,欧姆接触电阻率仅为5.2×10-4 Ω·cm-2,且其反射特性比其它金属电极好。 |
英文摘要: |
In order to realize the ZnO materials better in the application of the photoelectric devices,this paper studies the Ag/Au ohmic contact to n-ZnO thin films.Semiconductor char acteristic analysis system is used to measure the I-V characteristic curve. Dig dis c method is used to test the ohmic contact resistance rate.They reflect the influence of annealing temperature on the conta ct characteristics.Auger electron spectroscopy (AES) is used to study the microscopic structure of ohmic contact finally.The results show that Ag (50nm)/Au (100nm) ohmic contact to n-ZnO thin film is th e best when annealing temperature is 500℃.The as-deposited Ag/Au scheme shows a specific contact re sistivity of 2.3×10-2 Ω·cm-2.And the lowest specific contact resistivity is 5.2×10-4 Ω·cm-2.The specific contact resistivity shows a decreasing tendency with the annealing temperature up to 500℃.However,for the sample annealed above 600℃,the I-V curves reveal the characteristics of local bending,which shows rectification trends.Interface diffusions and reactions induced by anneal ing treatment are found to be responsible for the decrease of ohmic contact resistivity and the rectificati on trends.The reflection of Ag/Au characteristic is better than that with other metal depositions. |
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