何祖明,夏咏梅,唐斌,王青.酞菁染料ZnPc和Q-PbS复合敏化纳米晶ZnO薄膜电极的研究[J].光电子激光,2014,(8):1506~1510 |
酞菁染料ZnPc和Q-PbS复合敏化纳米晶ZnO薄膜电极的研究 |
Study on nanocrystalline ZnO film electrode with ZnPc dye and PbS quantum dots composite sensitization |
投稿时间:2014-04-17 |
DOI: |
中文关键词: 溶胶-凝胶 纳米晶ZnO薄膜电极 ZnPc染料 Q-PbS 染料敏太阳能电池(DSSC) |
英文关键词:sol-gel nanocrystalline ZnO film electrode dye ZnPc quantum dots PbS dye -sensitised solar cell(DSSC) |
基金项目:国家自然科学基金(61107055)资助项目 (1.常州大学 怀德学院,江苏 常州 213016; 2.东南大学 材料科学与工程学院,江苏 南京 211189; 3.常州大学 数理学院,江苏 常州 213164; 4.兰州理工大学 理学院,甘肃 兰州 730050) |
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中文摘要: |
利用溶胶-凝胶旋 涂镀膜法结合热处理工艺在FTO玻璃上制备了ZnO薄膜,并通过X射线衍射(XRD)、扫描电子镜 (SEM)对其晶相及表面形貌进行了 表征;以酞菁染料ZnPc和窄禁带半导体PbS量子点(Q-PbS)为敏化剂,分别制备了FTO/ZnO/ ZnPc电极、 FTO/ZnO/Q-PbS电极和FTOZnO/Q-PbS/ZnPc电极,结果表明,Zn Pc和Q-PbS对 ZnO纳米颗粒膜产生了良好的敏化作用,且两者的复合敏化效果最好;制备了FTO/ZnO/Q-Pb S/ZnPc为光阳极的染料敏化太阳能电池 (DSSC),在模拟太阳光 下,电池的开路电压为304mV,短路电流为1.42mA,光电转换效率为0.696%,填充因子为0.348。 |
英文摘要: |
In order to study on the photoelectric properties of nanocrystalline Z nO thin films which will serve as the anode material of dye-sensitised solar cell (DSSC),the fabrication of nano crystalline ZnO thin films and a series of measurements and characterizations were carried out in this paper.Firs tly,nanocrystalline ZnO films were fabricated on FTO-glass substrates by the sol-gel spin coating method and a ra pid thermal treatment.And the crystal phase and morphology were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM),respectively.Se condly,using ZnPc dye and PbS quantum dots (Q-PbS) as sensitizers,FTO/ZnO/ZnPc electrode,FTO/ZnO/Q-PbS electrode,and FTO/ZnO/Q-PbS/ZnPc electrode were prepared,respectively.And the UV-vis absor bance spectra of these electrodes were measured and analyzed.The results show that ZnPc dye and Q-P bS could well sensitize the ZnO nanoparticle film electrodes,among them,the sensitization effect of Q-PbS is better than that of ZnPc dye, and the effect of composite sensitization of ZnPc dye and Q-PbS is optimal.Fi nally,utilizing FTO/ZnO/Q-PbS/ZnPc electrode whose sensitization effect is optimal as photoele ctrode,a solar cell device was fabricated and its working characteristic curve (I-V cu rve was measured).In simula tions,a fill factor of 0.348,a schort-circuit photocurrent of 1.42mA,an open-circuit voltage of 304mV,and a overall light to electricity conversion efficiency of 0.696% are obtained. |
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