周砚扬,周林杰,孙晓萌,朱海珂,谢静雅,陈建平.一种基于交趾型PN结的Si基微盘电-光调制器[J].光电子激光,2014,(6):1075~1079 |
一种基于交趾型PN结的Si基微盘电-光调制器 |
Interleaved PN junction based Si microdisk modulator |
投稿时间:2013-11-25 |
DOI: |
中文关键词: 光通信 Si基微盘谐振腔 光调制器 交趾PN结 |
英文关键词:optical communication Si microdisk resonator optical modulator interleaved PN junction |
基金项目:国家“973”计划(2011CB301700)和国家自然科学基金(61071011,2,61127016)资助 项目 (上海交通大学 “区域光纤通信网与新型光通信系统”国家重点实验室,上海200240) |
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中文摘要: |
制备了一种与CMOS工艺相兼容的Si基微盘电-光调 制器,通过使用微盘谐振腔结构 减小器件尺寸,使用交趾型PN结扩大光模式与电场的交叠以增强等离子色散效应。调制器 的测试结果表明,谐振峰随反向偏置电压增大而逐渐红移,在原谐振波长处可获得约为9dB 消光比;在1.5V反向偏置电压、输入信号为峰峰值3V的伪随机码下 ,实现10Gbit/s调制速率,功耗为44.1pJ/b it。 |
英文摘要: |
A CMOS compatible silicon microdisk modulator was fabricated.The device size is reduced by using the microdisk resonator.The overlap between mic rodisk resonance mode and electric field is increased by using interleaved PN junctions ,and hence the plasma dispersion effect is enhanced.Experimental results reveal that the resonance can be red-shifted under a reverse bias,resulting in transmission extinction ratio of ~9dB at the original resonance wavelength.The modulation speed can re ach 10Gbit/s measured using a pseudo-random bit sequence (PRBS) signal with 3V peak-to-peak value under 1.5V reverse bias.The power consumption is 44.1pJ /bit. |
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