| 黄瑞志,曲崇,李清山,张立春,张忠俊,张敏,赵风周.n-ZnO/p-GaN异质结紫外探测器及其光电性能研究[J].光电子激光,2014,(6):1058~1062 |
| n-ZnO/p-GaN异质结紫外探测器及其光电性能研究 |
| Photoelectric properties of n-ZnO/p-GaN heterojunction UV photodetector |
| 投稿时间：2013-12-03 |
| DOI： |
| 中文关键词: 探测器 ZnO 异质结 响应度 |
| 英文关键词:detector ZnO p-n heterojunction responsivity |
| 基金项目:国家自然科学基金(11144010)和山东省自然科学基金(ZR2010AL026)资助项目 (鲁东大学 物理与光电工程学院,山东 烟台 264025) |
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| 中文摘要: |
| 利用脉冲激光沉积(PLD)方法在p-GaN衬底上沉积 了n-ZnO薄膜,构造了n-ZnO/p-GaN异质结型紫外(UV)光-电 探测器原型器件,在(UV)光照条件下测试了器件的光电性能。扫描电镜(SEM)和X射线衍射(X RD)测试结果表明,ZnO薄膜具有很 好的结晶质量；I-V曲线显示,器件在黑暗和光照环境下都表现 出明显的整流行为；光谱响应曲线表明,器件 响应度峰值出现在364nm附近,当反向电压为－5V时光电流达到饱 和,此时响应度峰值达到1.19A/W。不 同反向工作电压下的光谱探测率曲线表明,器件对364nm附近的UV光 有较强的选择性,在－ 2V偏压下具有最佳的探测率,其探测率峰值达到8.9×1010 c m·Hz1/2/W。 |
| 英文摘要: |
| High quality ZnO films were depos ited on p-GaN by pulsed laser deposition method to form a pn heterojunction UV photodetector and they were tested under UV illumination.scan electro microscopy (SEM) and X-ray diffraction (XRD) results show the good crystal quality of ZnO films.The I-V character istic curves of the n-ZnO/p-GaN heterojunction UV photodetector indicate obvious rectifying behaviour both in the dark and under i llumination.The spectral responsivity curves under several reverse voltages show the spectral responsivit y peak is located at 364nm. When the reverse voltage reaches －5V,the photocurrent of the detector saturate s and the peak responsivity reaches 1.19A/W.The detectivity curves under various reverse volta ges show that the detector has a high selectivity for UV light around 364nm,and the optimal detec tivity reaches 8.9×1010 cm·Hz1/2/W at －2V reverse bias.At －2V bias,the current of the detector under 365nm UV light is about 183times of tha t in the dark.Continuous measurements indicate the reproducibility and stability of the developed heterojunction UV photodetector. |
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