| 高永慧,张刚,汪津,姜文龙,高欣,薄报学.利用石墨烯掺杂在NPB中的OLED性能研究[J].光电子激光,2014,(6):1054~1057 |
| 利用石墨烯掺杂在NPB中的OLED性能研究 |
| The OLED performance with graphene doped in NPB layer |
| 投稿时间：2014-01-12 |
| DOI： |
| 中文关键词: 石墨烯 有机电致发光器件(OLED) 效率 亮度 |
| 英文关键词:graphene organic light-emitting diode (OLED) efficiency luminance |
| 基金项目:国家自然科学基金(61177019,61176048)、吉林省基础研究计划基金(20100510)、吉林省科 技发展(20101512,201215221)、吉林省教育厅“十二五”科学技术研究(2011154,2012176,2013208)和四平市科技计划(2012038)资助项目 (1.长春理工大学 高功率半导体激光国家重点实验室,吉林 长春 130022； 2.吉林师范大学 信息技术学院,功能材料物理与化学教育部重点实验室,吉林 四平 136000) |
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| 中文摘要: |
| 采用NPB掺杂石墨烯作为空穴传输层,制备有机 电致发光器件(OLED), 器件结构为ITO/NPB:Graphene(20wt.%)(50nm)/Alq3(80nm)/LiF(0.5nm)/Al(120nm)。将其与标准器件ITO/NPB(50nm)/Alq3(80nm)/LiF(0.5nm)/Al(120nm)作性能比 较,研究石墨烯对OLED性能的影响。结果表明,在NPB中掺杂石墨烯薄层的器 件,在同等条件下性能最佳,当电流密度为90mA/cm2时器件电流 效率达到最 大值3.40cd/A,与标准器件最高效率相比增大1.49倍；亮度在15V时达到最大值 10070cd/m2,比标准器件最大亮度增大5.16倍。 |
| 英文摘要: |
| The organic light emitting diode(OLED)was fabricated,which uses graphen e doped in NPB as the hole transport layer.The structure of the device is ITO/NPB:Graph ene(20wt.%) (50nm)/Alq3(80nm)/LiF(0.5nm)/Al(120nm).We compare it with the standard device whose structure is ITO/NPB(50nm)/Alq3(80nm)/LiF(0.5nm)/A l(120nm). The effect of graphene on performance of OLED is investigated.The results show that the device with graphene doped NPB layer presents better performance under t he same conditions.When the current density is 90mA/cm2,the current efficiency reaches the maximum value of 3.40cd/A,and compared with the standard device,the maximum efficiency is increased by 1.49times.The devic e reac hes the maximum luminance of 10070cd/m2when the dr iving voltage is 15V,which is increased by 5.16times than that of the standard device. |
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