耿耀辉,徐生艳,张颖涛,袁虎臣,李岚.Si4+掺杂对Gd1.6WO6:Eu3+0.4荧光粉发光特性的影响[J].光电子激光,2014,(3):496~500 |
Si4+掺杂对Gd1.6WO6:Eu3+0.4荧光粉发光特性的影响 |
Influence of Si4+ doping on luminescence properties of Gd1.6WO6:Eu 3+0.4 phosphors |
投稿时间:2013-10-09 |
DOI: |
中文关键词: Gd1.6WO6:Eu3+0.4荧光粉 晶体对称性 发光强度 |
英文关键词:Gd1.6WO6:Eu3+0.4 phosphors crystal symmetry luminous inten sity |
基金项目:天津市高等学校科技发展基金(20120905)和天津理工大学育苗基金(LGYM201112)资助项目 (1.天津理工大学 理学院天津 300384; 2.天津理工大学 材料物理研究所天津 300384) |
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中文摘要: |
采用高温固相法合成了不同Si4+掺杂比例的 Gd1.6(W1-xSix)O 6:Eu3+0.4荧光粉,分析了Si4+掺杂对 Gd1.6(W1-xSix)O 6:Eu3+0.4荧光粉晶格结 构的影响,研究了不同Si4+掺杂比例下的XRD谱、激发光谱、发射光谱和衰减曲线。 结果发现:Si4+的掺杂改变了基质的结构,使得激活剂离子Eu3+周围的晶体场 改变,从而改变了荧光粉的发光效率,当Si4+ 的掺杂浓度达到0.4mol时,晶体对称性最差,粉体发光强度最大 。根据发射光谱和衰减曲线计算了样品的J-O强度参数 和无辐射跃迁几率,结果表明适量的Si4+掺杂可以抑制无辐射跃迁,提高发光强度。 计算结果与实验结果相符。 |
英文摘要: |
Gd1.6(W1-xSix)O 6:Eu3+0.4 phosphors with different doping concentrations of Si4+ were prepared by a conventional high temperature solid-state phase reaction method,the influence of Si4+ doping on the phosphors lattice structure was analyzed,and the X-ray diffraction (XRD) patte rns,excitation spectra,emission spectra and decay curves of phosphors under different doped concentrations of Si 4+ were discussed, respectively.The experimental results show that Si4+ doping changes the st ructure of the matrix,makes the crystal field around the activator Eu3+ ions change,which affects the lumi nous efficiency of phosphor,and when Si4+ doping concentration reaches 0.4mol,the crystal symmetry is the wors t,and the luminous intensity of phosphors reaches the maximum value.According to the emission spectra and decay curves,w e calculate the J-O intensity parameters and nonradiative transition probability of the samples and find that the appropriate amount of Si4+ doping can suppress nonradiative transition and enhance the luminous intensity.The theoretical calculation results are agreement with the experimental results. |
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